06N06L

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Overview of 06N06L

Part Number06N06L
ManufacturerGoford Semiconductor
DescriptionN60V,RD(MAX)<42M@10V,RD(MAX)<46M
DatasheetsDownload 06N06L Datasheet PDFPDF Icon
Price for 06N06L

Specification of 06N06L

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
5.5A
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
42mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
765 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
960mW
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3L
Package / Case
TO-236-3, SC-59, SOT-23-3

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