10ETF12S

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Overview of 10ETF12S

Part Number10ETF12S
ManufacturerVishay / Semiconductor - Diodes Division
DescriptionDIODE GEN PURP 1.2KV 10A TO263AB
DatasheetsDownload 10ETF12S Datasheet PDFPDF Icon
Price for 10ETF12S

Specification of 10ETF12S

Status
Obsolete
Package
Tube
Supplier
Vishay General Semiconductor - Diodes Division
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.33 V @ 10 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
310 ns
Current - Reverse Leakage @ Vr
100 A @ 1200 V
Capacitance @ Vr, F
-
Mounting Type
Surface Mount
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB (DPAK)
Operating Temperature - Junction
-40C ~ 150C

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