1216D2

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Overview of 1216D2

Part Number1216D2
ManufacturerGoford Semiconductor
DescriptionP-12V,-16A,RD(MAX)<[email protected],VTH
Price for 1216D2

Specification of 1216D2

Status
Active
Package
Tape & Reel (TR)
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
21mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
18W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-DFN (2x2)
Package / Case
6-WDFN Exposed Pad

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