18N20J

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Overview of 18N20J

Part Number18N20J
ManufacturerGoford Semiconductor
DescriptionN200V, 18A,RD<0.16@10V,VTH1V~3V,
DatasheetsDownload 18N20J Datasheet PDFPDF Icon
Price for 18N20J

Specification of 18N20J

Status
Active
Package
Tube,Tube
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
18A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
17.7 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
836 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
65.8W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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