19MT050XF

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Overview of 19MT050XF

Part Number19MT050XF
ManufacturerVishay / Semiconductor - Diodes Division
DescriptionMOSFET 4N-CH 500V 31A MTP
DatasheetsDownload 19MT050XF Datasheet PDFPDF Icon
Price for 19MT050XF

Specification of 19MT050XF

Status
Obsolete
Series
HEXFET®
Package
Bulk
Supplier
Vishay General Semiconductor - Diodes Division
Technology
MOSFET (Metal Oxide)
Configuration
4 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25C
31A
Rds On (Max) @ Id, Vgs
220mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
6V @ 250A
Gate Charge (Qg) (Max) @ Vgs
160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
7210pF @ 25V
Power - Max
1140W
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
16-MTP Module
Supplier Device Package
16-MTP

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