1N5407GHB0G

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Overview of 1N5407GHB0G

Part Number1N5407GHB0G
ManufacturerTaiwan Semiconductor
DescriptionDIODE GEN PURP 800V 3A DO201AD
DatasheetsDownload 1N5407GHB0G Datasheet PDFPDF Icon
Price for 1N5407GHB0G

Specification of 1N5407GHB0G

Status
Active
Series
Automotive, AEC-Q101
Package
Bulk
Supplier
Taiwan Semiconductor Corporation
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
800 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1 V @ 3 A
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
5 A @ 800 V
Capacitance @ Vr, F
25pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Supplier Device Package
DO-201AD
Operating Temperature - Junction
-55C ~ 150C

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