1N5822US

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Overview of 1N5822US

Part Number1N5822US
ManufacturerMicrochip Technology
DescriptionDIODE SCHOTTKY 40V 3A B SQ-MELF
DatasheetsDownload 1N5822US Datasheet PDFPDF Icon
Price for 1N5822US

Specification of 1N5822US

Status
Active
Package
Bulk
Supplier
Microchip Technology
Technology
Schottky
Voltage - DC Reverse (Vr) (Max)
40 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
500 mV @ 3 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
100 A @ 40 V
Capacitance @ Vr, F
-
Mounting Type
Surface Mount
Package / Case
SQ-MELF, B
Supplier Device Package
B, SQ-MELF
Operating Temperature - Junction
-65C ~ 125C

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