2002A

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Overview of 2002A

Part Number2002A
ManufacturerGoford Semiconductor
DescriptionN190V,5A,RD<540M@10V,VTH1.0V~3.0
Price for 2002A

Specification of 2002A

Status
Active
Package
Tape & Reel (TR)
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
190 V
Current - Continuous Drain (Id) @ 25C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
540mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
733 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
1.4W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-6L
Package / Case
SOT-23-6

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