2301H

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Overview of 2301H

Part Number2301H
ManufacturerGoford Semiconductor
DescriptionP30V,RD(MAX)<[email protected],RD(MAX)<
DatasheetsDownload 2301H Datasheet PDFPDF Icon
Price for 2301H

Specification of 2301H

Status
Active
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
125mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 2.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
405 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3

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