2N5010S

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Overview of 2N5010S

Part Number2N5010S
ManufacturerMicrochip Technology
DescriptionPOWER BJT
Price for 2N5010S

Specification of 2N5010S

Status
Active
Package
Bulk
Supplier
Microchip Technology
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
500 V
Vce Saturation (Max) @ Ib, Ic
1.4V @ 5mA, 25mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 25mA, 10V
Power - Max
1 W
Frequency - Transition
-
Operating Temperature
-65C ~ 200C (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39 (TO-205AD)

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