2N657S

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Overview of 2N657S

Part Number2N657S
ManufacturerMicrochip Technology
DescriptionPOWER BJT
Price for 2N657S

Specification of 2N657S

Status
Active
Package
Bulk
Supplier
Microchip Technology
Transistor Type
NPN
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max)
10A (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 10V
Power - Max
600 mW
Frequency - Transition
-
Operating Temperature
-65C ~ 200C (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Supplier Device Package
TO-5AA

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