2N6661JTX02

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Overview of 2N6661JTX02

Part Number2N6661JTX02
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 90V 860MA TO39
DatasheetsDownload 2N6661JTX02 Datasheet PDFPDF Icon
Price for 2N6661JTX02

Specification of 2N6661JTX02

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
90 V
Current - Continuous Drain (Id) @ 25C
860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
725mW (Ta), 6.25W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AD, TO-39-3 Metal Can

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