2N6798U

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Overview of 2N6798U

Part Number2N6798U
ManufacturerMicrosemi
DescriptionMOSFET N-CH 200V 5.5A 18ULCC
DatasheetsDownload 2N6798U Datasheet PDFPDF Icon
Price for 2N6798U

Specification of 2N6798U

Status
Obsolete
Package
Bulk
Supplier
Microchip Technology
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.29 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
18-ULCC (9.14x7.49)
Package / Case
18-CLCC

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