2SJ304(F)

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Overview of 2SJ304(F)

Part Number2SJ304(F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET P-CH 60V 14A TO220NIS
DatasheetsDownload 2SJ304(F) Datasheet PDFPDF Icon
Price for 2SJ304(F)

Specification of 2SJ304(F)

Status
Obsolete
Package
Bulk
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
120mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220NIS
Package / Case
TO-220-3 Full Pack

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