2SJ542-E

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Overview of 2SJ542-E

Part Number2SJ542-E
ManufacturerRenesas Electronics America
DescriptionMOSFET N-CH 60V 18A TO220AB
DatasheetsDownload 2SJ542-E Datasheet PDFPDF Icon
Price for 2SJ542-E

Specification of 2SJ542-E

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
65mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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