2SJ661-1E

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Overview of 2SJ661-1E

Part Number2SJ661-1E
Manufactureronsemi
DescriptionMOSFET P-CH 60V 38A TO262-3
DatasheetsDownload 2SJ661-1E Datasheet PDFPDF Icon
Price for 2SJ661-1E

Specification of 2SJ661-1E

Status
Obsolete
Package
Bulk,Tube
Supplier
Rochester Electronics, LLC,onsemi
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
38A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
39mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4360 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
1.65W (Ta), 65W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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