2SK1119(F)

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Overview of 2SK1119(F)

Part Number2SK1119(F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 1000V 4A TO220AB
DatasheetsDownload 2SK1119(F) Datasheet PDFPDF Icon
Price for 2SK1119(F)

Specification of 2SK1119(F)

Status
Obsolete
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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