2SK1958-T1-A

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Overview of 2SK1958-T1-A

Part Number2SK1958-T1-A
ManufacturerRenesas Electronics America
Description2SK1958-T1-A - N-CHANNEL MOS FET
Price for 2SK1958-T1-A

Specification of 2SK1958-T1-A

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
16 V
Current - Continuous Drain (Id) @ 25C
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V
Rds On (Max) @ Id, Vgs
12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.1V @ 10A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
7V
Input Capacitance (Ciss) (Max) @ Vds
10 pF @ 3 V
FET Feature
-
Power Dissipation (Max)
150mW (Ta)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
8-MMPAK
Package / Case
8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

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