2SK2719(F)

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Overview of 2SK2719(F)

Part Number2SK2719(F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 900V 3A TO3P
DatasheetsDownload 2SK2719(F) Datasheet PDFPDF Icon
Price for 2SK2719(F)

Specification of 2SK2719(F)

Status
Obsolete
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3

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