2SK2845(TE16L1,Q)

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Overview of 2SK2845(TE16L1,Q)

Part Number2SK2845(TE16L1,Q)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 900V 1A DP
DatasheetsDownload 2SK2845(TE16L1,Q) Datasheet PDFPDF Icon
Price for 2SK2845(TE16L1,Q)

Specification of 2SK2845(TE16L1,Q)

Status
Obsolete
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PW-MOLD
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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