2SK669-AC

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Overview of 2SK669-AC

Part Number2SK669-AC
Manufactureronsemi
DescriptionMOSFET N-CH 50V 100MA 3SPA
DatasheetsDownload 2SK669-AC Datasheet PDFPDF Icon
Price for 2SK669-AC

Specification of 2SK669-AC

Status
Obsolete
Package
Box
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25C
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
20Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
125C (TJ)
Mounting Type
Through Hole
Supplier Device Package
3-SPA
Package / Case
3-SIP

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