630AT

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of 630AT

Part Number630AT
ManufacturerGoford Semiconductor
DescriptionN200V,RD(MAX)<250M@10V,RD(MAX)<3
DatasheetsDownload 630AT Datasheet PDFPDF Icon
Price for 630AT

Specification of 630AT

Status
Active
Package
Tube,Tube
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
11.8 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
509 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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