AN1L3N

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Overview of AN1L3N

Part NumberAN1L3N
ManufacturerNEC Corporation
DescriptionSMALL SIGNAL BIPOLAR TRANSISTOR
DatasheetsDownload AN1L3N Datasheet PDFPDF Icon
Price for AN1L3N

Specification of AN1L3N

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
200mV @ 250A, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
-
Power - Max
250 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92

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