AOWF10N65

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Overview of AOWF10N65

Part NumberAOWF10N65
ManufacturerAlpha and Omega Semiconductor, Inc.
DescriptionMOSFET N-CH 650V 10A TO262F
DatasheetsDownload AOWF10N65 Datasheet PDFPDF Icon
Price for AOWF10N65

Specification of AOWF10N65

Status
Not For New Designs
Package
Tube
Supplier
Alpha & Omega Semiconductor Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1645 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262F
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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