APL1001J

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Overview of APL1001J

Part NumberAPL1001J
ManufacturerMicrochip Technology
DescriptionMOSFET N-CH 1000V 18A ISOTOP
DatasheetsDownload APL1001J Datasheet PDFPDF Icon
Price for APL1001J

Specification of APL1001J

Status
Obsolete
Package
Tube
Supplier
Microchip Technology
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
7200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
ISOTOP
Package / Case
SOT-227-4, miniBLOC

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