APT25GP120BDQ1G

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Overview of APT25GP120BDQ1G

Part NumberAPT25GP120BDQ1G
ManufacturerMicrochip Technology
DescriptionIGBT 1200V 69A 417W TO247
DatasheetsDownload APT25GP120BDQ1G Datasheet PDFPDF Icon
Price for APT25GP120BDQ1G

Specification of APT25GP120BDQ1G

Status
Active
Series
POWER MOS 7®
Package
Tube
Supplier
Microchip Technology
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
69 A
Current - Collector Pulsed (Icm)
90 A
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 25A
Power - Max
417 W
Switching Energy
500J (on), 440J (off)
Input Type
Standard
Gate Charge
110 nC
Td (on/off) @ 25C
12ns/70ns
Test Condition
600V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 [B]

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