APT37M100B2

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Overview of APT37M100B2

Part NumberAPT37M100B2
ManufacturerMicrochip Technology
DescriptionMOSFET N-CH 1000V 37A T-MAX
DatasheetsDownload APT37M100B2 Datasheet PDFPDF Icon
Price for APT37M100B2

Specification of APT37M100B2

Status
Active
Package
Tube
Supplier
Microchip Technology
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25C
37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
330mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
305 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
9835 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1135W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
T-MAX [B2]
Package / Case
TO-247-3 Variant

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