APT50GP60B2DQ2G

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Overview of APT50GP60B2DQ2G

Part NumberAPT50GP60B2DQ2G
ManufacturerMicrochip Technology
DescriptionIGBT 600V 150A 625W TMAX
DatasheetsDownload APT50GP60B2DQ2G Datasheet PDFPDF Icon
Price for APT50GP60B2DQ2G

Specification of APT50GP60B2DQ2G

Status
Active
Series
POWER MOS 7®
Package
Tube
Supplier
Microchip Technology
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
150 A
Current - Collector Pulsed (Icm)
190 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 50A
Power - Max
625 W
Switching Energy
465J (on), 635J (off)
Input Type
Standard
Gate Charge
165 nC
Td (on/off) @ 25C
19ns/85ns
Test Condition
400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Supplier Device Package
-

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