APTM100TDU35PG

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Overview of APTM100TDU35PG

Part NumberAPTM100TDU35PG
ManufacturerMicrosemi
DescriptionMOSFET 6N-CH 1000V 22A SP6-P
DatasheetsDownload APTM100TDU35PG Datasheet PDFPDF Icon
Price for APTM100TDU35PG

Specification of APTM100TDU35PG

Status
Obsolete
Package
Bulk
Supplier
Microchip Technology
Technology
MOSFET (Metal Oxide)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1000V (1kV)
Current - Continuous Drain (Id) @ 25C
22A
Rds On (Max) @ Id, Vgs
420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
5200pF @ 25V
Power - Max
390W
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP6
Supplier Device Package
SP6-P

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