APTM20DAM10TG

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Overview of APTM20DAM10TG

Part NumberAPTM20DAM10TG
ManufacturerMicrosemi
DescriptionMOSFET N-CH 200V 175A SP4
DatasheetsDownload APTM20DAM10TG Datasheet PDFPDF Icon
Price for APTM20DAM10TG

Specification of APTM20DAM10TG

Status
Obsolete
Package
Bulk
Supplier
Microchip Technology
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
175A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12mOhm @ 87.5A, 10V
Vgs(th) (Max) @ Id
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
224 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
13700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
694W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP4
Package / Case
SP4

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