ATP218-TL-H

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Overview of ATP218-TL-H

Part NumberATP218-TL-H
Manufactureronsemi
DescriptionMOSFET N-CH 30V 100A ATPAK
Price for ATP218-TL-H

Specification of ATP218-TL-H

Status
Obsolete
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 4.5 V
Vgs (Max)
10V
Input Capacitance (Ciss) (Max) @ Vds
6600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
ATPAK
Package / Case
ATPAK (2 Leads+Tab)

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