AUIRF9Z34N-INF

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Overview of AUIRF9Z34N-INF

Part NumberAUIRF9Z34N-INF
ManufacturerInfineon Technologies
DescriptionAUTOMOTIVE HEXFET P CHANNEL
DatasheetsDownload AUIRF9Z34N-INF Datasheet PDFPDF Icon
Price for AUIRF9Z34N-INF

Specification of AUIRF9Z34N-INF

Status
Active
Series
Automotive, AEC-Q101, HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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