BC856BWE6327

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Overview of BC856BWE6327

Part NumberBC856BWE6327
ManufacturerInfineon Technologies
DescriptionBIPOLAR GEN PURPOSE TRANSISTOR
DatasheetsDownload BC856BWE6327 Datasheet PDFPDF Icon
Price for BC856BWE6327

Specification of BC856BWE6327

Status
Active
Series
Automotive, AEC-Q101
Package
Bulk
Supplier
Rochester Electronics, LLC
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
65 V
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA, 5V
Power - Max
330 mW
Frequency - Transition
250MHz
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
PG-SOT323-3-1

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