BC857BWE6327

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Overview of BC857BWE6327

Part NumberBC857BWE6327
ManufacturerInfineon Technologies
DescriptionBIPOLAR GEN PURPOSE TRANSISTOR
DatasheetsDownload BC857BWE6327 Datasheet PDFPDF Icon
Price for BC857BWE6327

Specification of BC857BWE6327

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
45 V
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA, 5V
Power - Max
250 mW
Frequency - Transition
250MHz
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
PG-SOT323

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