BFR949L3E6327

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Overview of BFR949L3E6327

Part NumberBFR949L3E6327
ManufacturerInfineon Technologies
DescriptionRF BIPOLAR TRANSISTOR
DatasheetsDownload BFR949L3E6327 Datasheet PDFPDF Icon
Price for BFR949L3E6327

Specification of BFR949L3E6327

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
10V
Frequency - Transition
9GHz
Noise Figure (dB Typ @ f)
1dB ~ 2.5dB @ 1GHz
Gain
21.5dB
Power - Max
250mW
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 5mA, 6V
Current - Collector (Ic) (Max)
50mA
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
PG-TSLP-3-1

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