BS108G

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Overview of BS108G

Part NumberBS108G
Manufactureronsemi
DescriptionMOSFET N-CH 200V 250MA TO92-3
DatasheetsDownload BS108G Datasheet PDFPDF Icon
Price for BS108G

Specification of BS108G

Status
Obsolete
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2V, 2.8V
Rds On (Max) @ Id, Vgs
8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92 (TO-226)
Package / Case
TO-226-3, TO-92-3 Long Body

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