BSB012NE2LXIXUMA1

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Overview of BSB012NE2LXIXUMA1

Part NumberBSB012NE2LXIXUMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 25V 170A 2WDSON
DatasheetsDownload BSB012NE2LXIXUMA1 Datasheet PDFPDF Icon
Price for BSB012NE2LXIXUMA1

Specification of BSB012NE2LXIXUMA1

Status
Obsolete
Series
OptiMOS™
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25C
170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5852 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 57W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M
Package / Case
3-WDSON

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