BSC014N03LSGATMA1

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Overview of BSC014N03LSGATMA1

Part NumberBSC014N03LSGATMA1
ManufacturerInfineon Technologies
DescriptionBSC014N03 - 12V-300V N-CHANNEL P
DatasheetsDownload BSC014N03LSGATMA1 Datasheet PDFPDF Icon
Price for BSC014N03LSGATMA1

Specification of BSC014N03LSGATMA1

Status
Active
Series
OptiMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
34A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
131 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
10000 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 139W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN

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