BSC019N04NSG

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Overview of BSC019N04NSG

Part NumberBSC019N04NSG
ManufacturerInfineon Technologies
DescriptionBSC019N04 - 12V-300V N-CHANNEL P
Price for BSC019N04NSG

Specification of BSC019N04NSG

Status
Active
Series
OptiMOS™ 3
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
29A (Ta), 204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 85A
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
8800 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 125W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN

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