BSC029N025SG

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Overview of BSC029N025SG

Part NumberBSC029N025SG
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload BSC029N025SG Datasheet PDFPDF Icon
Price for BSC029N025SG

Specification of BSC029N025SG

Status
Active
Series
OptiMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25C
24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 80A
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5090 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 78W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN

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