BSC036NE7NS3GATMA1

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Overview of BSC036NE7NS3GATMA1

Part NumberBSC036NE7NS3GATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 75V 100A TDSON
DatasheetsDownload BSC036NE7NS3GATMA1 Datasheet PDFPDF Icon
Price for BSC036NE7NS3GATMA1

Specification of BSC036NE7NS3GATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
Infineon Technologies,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.8V @ 110A
Gate Charge (Qg) (Max) @ Vgs
63.4 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 37.5 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 156W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-7
Package / Case
8-PowerTDFN

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