BSC080N12LSGATMA1

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Overview of BSC080N12LSGATMA1

Part NumberBSC080N12LSGATMA1
ManufacturerInfineon Technologies
DescriptionTRENCH >=100V PG-TDSON-8
DatasheetsDownload BSC080N12LSGATMA1 Datasheet PDFPDF Icon
Price for BSC080N12LSGATMA1

Specification of BSC080N12LSGATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25C
12A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.4V @ 112A
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
7400 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8
Package / Case
8-PowerTDFN

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