BSC091N03MSCGATMA1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of BSC091N03MSCGATMA1

Part NumberBSC091N03MSCGATMA1
ManufacturerInfineon Technologies
DescriptionPOWER FIELD-EFFECT TRANSISTOR, 1
DatasheetsDownload BSC091N03MSCGATMA1 Datasheet PDFPDF Icon
Price for BSC091N03MSCGATMA1

Specification of BSC091N03MSCGATMA1

Status
Active
Series
SIPMOS®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
12A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 28W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-6
Package / Case
8-PowerTDFN

Parts Information

Fields marked with a * are required
Download CSVCopy Table
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)

Contact Information

Fields marked with a * are required

Introduction

BSC091N03MSCGATMA1 is in Stock, Find BSC091N03MSCGATMA1 electronics components stock, Technical information, Inventory and Price here at Ic-find.com, send us an inquiry for BSC091N03MSCGATMA1 to get the price and lead time now! We can offer fast shipment via DHL/FedEx/UPS.

Email us: [email protected] or RFQ BSC091N03MSCGATMA1 Online.

FAQ

  • 1 How to place an order?[Click to Expand]

  • 2 What payment methods do you offer?[Click to Expand]

  • 3 How do you handle the shipment?[Click to Expand]

  • 4 I can't find a part on IC-find, what should I do?[Click to Expand]

Recommend Products

Your RFQ Preview

Fields marked with a * are required
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)
Continue Shopping
Go RFQ Page