BSC130P03LSGAUMA1

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Overview of BSC130P03LSGAUMA1

Part NumberBSC130P03LSGAUMA1
ManufacturerInfineon Technologies
DescriptionMOSFET P-CH 30V 12A/22.5A TDSON
DatasheetsDownload BSC130P03LSGAUMA1 Datasheet PDFPDF Icon
Price for BSC130P03LSGAUMA1

Specification of BSC130P03LSGAUMA1

Status
Obsolete
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
46mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8.1 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
640 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
UFM
Package / Case
3-SMD, Flat Leads

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