BSC750N10NDGATMA1

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Overview of BSC750N10NDGATMA1

Part NumberBSC750N10NDGATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET 2N-CH 100V 3.2A 8TDSON
DatasheetsDownload BSC750N10NDGATMA1 Datasheet PDFPDF Icon
Price for BSC750N10NDGATMA1

Specification of BSC750N10NDGATMA1

Status
Obsolete
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
Infineon Technologies,Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
3.2A
Rds On (Max) @ Id, Vgs
75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 12A
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
720pF @ 50V
Power - Max
26W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-4

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