BSM180D12P3C007

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Overview of BSM180D12P3C007

Part NumberBSM180D12P3C007
ManufacturerROHM Semiconductor
DescriptionSIC POWER MODULE
DatasheetsDownload BSM180D12P3C007 Datasheet PDFPDF Icon
Price for BSM180D12P3C007

Specification of BSM180D12P3C007

Status
Active
Package
Bulk
Supplier
Rohm Semiconductor
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
180A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V
Power - Max
880W
Operating Temperature
175C (TJ)
Mounting Type
Surface Mount
Package / Case
Module
Supplier Device Package
Module

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