BSM250D17P2E004

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Overview of BSM250D17P2E004

Part NumberBSM250D17P2E004
ManufacturerROHM Semiconductor
DescriptionHALF BRIDGE MODULE CONSISTING OF
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Price for BSM250D17P2E004

Specification of BSM250D17P2E004

Status
Active
Package
Box
Supplier
Rohm Semiconductor
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Current - Continuous Drain (Id) @ 25C
250A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 66mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
30000pF @ 10V
Power - Max
1800W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module

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