BSO615NGHUMA1

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Overview of BSO615NGHUMA1

Part NumberBSO615NGHUMA1
ManufacturerInfineon Technologies
DescriptionMOSFET 2N-CH 60V 2.6A 8SOIC
DatasheetsDownload BSO615NGHUMA1 Datasheet PDFPDF Icon
Price for BSO615NGHUMA1

Specification of BSO615NGHUMA1

Status
Obsolete
Series
SIPMOS®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
2.6A
Rds On (Max) @ Id, Vgs
150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id
2V @ 20A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 25V
Power - Max
2W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8

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