BSP315P-E6327

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Overview of BSP315P-E6327

Part NumberBSP315P-E6327
ManufacturerInfineon Technologies
DescriptionMOSFET P-CH 60V 1.17A SOT223-4
DatasheetsDownload BSP315P-E6327 Datasheet PDFPDF Icon
Price for BSP315P-E6327

Specification of BSP315P-E6327

Status
Obsolete
Series
SIPMOS®
Package
Tape & Reel (TR),Cut Tape (CT)
Supplier
Infineon Technologies
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
1.17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
800mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id
2V @ 160A
Gate Charge (Qg) (Max) @ Vgs
7.8 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA

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