BSP603S2LHUMA1

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Overview of BSP603S2LHUMA1

Part NumberBSP603S2LHUMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 55V 5.2A SOT223-4
DatasheetsDownload BSP603S2LHUMA1 Datasheet PDFPDF Icon
Price for BSP603S2LHUMA1

Specification of BSP603S2LHUMA1

Status
Obsolete
Series
OptiMOS™
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25C
5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
33mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id
2V @ 50A
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1390 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA

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